smd type transistors 1 www.kexin.com.cn npn silicon power switching transisto r FCX690B features 2w power dissipation. 6a peak pulse current. gain of 400 @i c =1amp. very low saturation voltage. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 45 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5v continuous collector current i cm 6a peak pulse current i c 2a power dissipation p tot 1w operating and storage temperature range t j, t stg -55to+150
2 smd type transistors www.kexin.com.cn electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =100a 45 v collector-emitter breakdown voltage * v (br)ceo i c =10ma 45 v emitter-base breakdown voltage v (br)ebo i e =100a 5v collector cut-off current i cbo v cb =9v 0.1 a emitter cut-off current i ebo v eb =4v 0.1 a collector-emitter saturation voltage * v ce( sat) i c =0.1a, i b =0.5ma i c =1a, i b =5ma 80 300 mv base-emitter saturation voltage * v be( sat) i c =1a, i b =10ma 1.1 v base-emitter on voltage * v be(on ) i c =1a, v ce =2v 1.0 v static forward current transfer ratio* h fe i c =100ma,v ce =2v i c =1a,v ce =2v i c =2a,v ce =2v 500 400 150 transitional frequency f t i c =50ma, v ce =5v, f=50mhz 150 mhz input capacitance c ibo v eb =0.5v, f=1mhz 200 pf output capacitance c obo v cb =10v, f=1mhz 16 pf turn-on time t (on) i c =500ma, v cc =10v 33 ns turn-off time t (off) i b1 =i b2 =50ma 1300 ns * pulse test: tp = 300 s; d 0.02. marking marking 690 FCX690B
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